Datasheet > 2SC3981/2SC3981A

2SC3981/2SC3981A

更新时间： 2024-11-13 23:20:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	59K
描述
2SC3981. 2SC3981A - NPN Transistor

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数据手册

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2SC3981/2SC3981A 数据手册

Power Transistors

2SC3981, 2SC3981A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Unit: mm

Features

High-speed switching

■

15.0±0.3

11.0±0.2

5.0±0.2

●

3.2

●

High collector to base voltage V_CBO

●

Wide area of safe operation (ASO)

Satisfactory linearity of foward current transfer ratio h_FE

Full-pack package which can be installed to the heat sink with

one screw

φ3.2±0.1

2.0±0.2

●

2.0±0.1

0.6±0.2

Absolute Maximum Ratings (T =25˚C)

■

1.1±0.1

Parameter

Symbol

Ratings

Unit

5.45±0.3

10.9±0.5

Collector to

2SC3981

2SC3981A

2SC3981

900

V_CBO

base voltage

Collector to

1000

900

V_CES

1:Base

2:Collector

3:Emitter

emitter voltage 2SC3981A

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1000

V_CEO

V_EBO

I_CP

800

TOP–3 Full Pack Package(a)

I_C

Base current

I_B

Collector power T_C=25°C

P_C

Ta=25°C

dissipation

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff

2SC3981

V_CB= 900V, I_E= 0

µA

current

2SC3981A

V_CB= 1000V, I_E= 0

V_EB= 7V, I_C= 0

Emitter cutoff current

I_EBO

V_CEO

h_FE1

h_FE2

µA

Collector to emitter voltage

I_C= 10mA, I_B= 0

800

V_CE= 5V, I_C= 0.1A

V_CE= 5V, I_C= 3A

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 3A, I_B= 0.6A

V_CE= 5V, I_C= 0.5A, f = 1MHz

1.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

MHz

µs

0.7

2.5

0.3

I_C= 3A, I_B1= 0.6A, I_B2= –1.2A,

V_CC= 250V

µs

12 3 4

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与2SC3981/2SC3981A相关器件

型号	品牌	获取价格	描述	数据表
2SC3981A	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC3982	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC3982A	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC3985	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 50V V(BR)CEO \| 1.2A I(C) \| TO-220
2SC3986	SANYO	获取价格	Driver Applications
2SC3986-RA	ONSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SC3986-RB	ONSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SC3986-YA	ONSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SC3986-YB	ONSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SC3987	SANYO	获取价格	Driver Applications