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2SC3980A PDF预览

2SC3980A

更新时间: 2024-11-13 22:13:47
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
3页 62K
描述
Silicon NPN triple diffusion planar type

2SC3980A 技术参数

生命周期:Obsolete零件包装代码:TO-3-3L
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.77Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):4 A
集电极-发射极最大电压:800 V配置:SINGLE
最小直流电流增益 (hFE):6JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):15 MHz
Base Number Matches:1

2SC3980A 数据手册

 浏览型号2SC3980A的Datasheet PDF文件第2页浏览型号2SC3980A的Datasheet PDF文件第3页 
Power Transistors  
2SC3980, 2SC3980A  
Silicon NPN triple diffusion planar type  
For high breakdown voltage high-speed switching  
Unit: mm  
Features  
High-speed switching  
15.0±0.3  
11.0±0.2  
5.0±0.2  
3.2  
High collector to base voltage VCBO  
Wide area of safe operation (ASO)  
Satisfactory linearity of foward current transfer ratio hFE  
Full-pack package which can be installed to the heat sink with  
one screw  
φ3.2±0.1  
2.0±0.2  
2.0±0.1  
0.6±0.2  
Absolute Maximum Ratings (T =25˚C)  
C
1.1±0.1  
Parameter  
Symbol  
Ratings  
Unit  
5.45±0.3  
10.9±0.5  
Collector to  
2SC3980  
2SC3980A  
2SC3980  
900  
VCBO  
V
base voltage  
Collector to  
1000  
1
2
3
900  
VCES  
V
1:Base  
2:Collector  
3:Emitter  
emitter voltage 2SC3980A  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
1000  
VCEO  
VEBO  
ICP  
800  
V
V
A
A
A
TOP–3 Full Pack Package(a)  
7
6
IC  
4
Base current  
IB  
2
Collector power TC=25°C  
70  
PC  
W
Ta=25°C  
dissipation  
3
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
50  
Unit  
Collector cutoff  
2SC3980  
VCB = 900V, IE = 0  
µA  
current  
2SC3980A  
VCB = 1000V, IE = 0  
VEB = 7V, IC = 0  
50  
Emitter cutoff current  
IEBO  
VCEO  
hFE1  
hFE2  
50  
µA  
Collector to emitter voltage  
IC = 10mA, IB = 0  
800  
8
V
VCE = 5V, IC = 0.1A  
VCE = 5V, IC = 2A  
Forward current transfer ratio  
6
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 2A, IB = 0.4A  
IC = 2A, IB = 0.4A  
VCE = 5V, IC = 0.2A, f = 1MHz  
1.5  
1.5  
V
V
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
15  
MHz  
µs  
0.7  
2.5  
0.3  
IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,  
VCC = 250V  
µs  
µs  
1

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