2SC3973

更新时间： 2024-11-13 22:39:59

品牌	Logo	应用领域
松下 - PANASONIC		开关
页数	文件大小	规格书
3页	62K
描述
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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2SC3973 数据手册

Power Transistors

2SC3973, 2SC3973A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Unit: mm

10.0±0.2

5.5±0.2

4.2±0.2

Features

High-speed switching

■

2.7±0.2

●

High collector to base voltage V_CBO

φ3.1±0.1

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h_FE

●

Full-pack package which can be installed to the heat sink with

one screw

1.3±0.2

1.4±0.1

Absolute Maximum Ratings (T =25˚C)

+0.2

–0.1

■

0.5

0.8±0.1

Parameter

Symbol

Ratings

Unit

Collector to

2SC3973

2SC3973A

2SC3973

800

2.54±0.25

V_CBO

base voltage

Collector to

900

5.08±0.5

800

V_CES

1:Base

2:Collector

3:Emitter

emitter voltage 2SC3973A

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

900

V_CEO

V_EBO

I_CP

500

TO–220 Full Pack Package(a)

I_C

Base current

I_B

Collector power T_C=25°C

P_C

Ta=25°C

dissipation

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

Collector cutoff

2SC3973

V_CB= 800V, I_E= 0

µA

current

2SC3973A

V_CB= 900V, I_E= 0

V_EB= 5V, I_C= 0

Emitter cutoff current

I_EBO

V_CEO

h_FE1

h_FE2

µA

Collector to emitter voltage

I_C= 10mA, I_B= 0

500

V_CE= 5V, I_C= 0.1A

V_CE= 5V, I_C= 4A

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 4A, I_B= 0.8A

V_CE= 10V, I_C= 0.5A, f = 1MHz

1.0

1.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

MHz

µs

1.0

3.0

0.3

I_C= 4A, I_B1= 0.8A, I_B2= –1.6A,

V_CC= 200V

µs

12 3

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