Datasheet > 2SC3689

2SC3689

更新时间： 2024-09-18 06:22:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	37K
描述
NPN Epitaxial Planar Silicon Transistor

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数据手册

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2SC3689 数据手册

SMD Type

TransistIoCrs

NPN Epitaxial Planar Silicon Transistor

2SC3689

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Small Cob (Cob=1.5pF typ).

Adoption of FBET process.

High DC current gain (hFE=800 to 3200).

Low collector-to-emitter saturation voltage (VCE(sat) 0.5V).

High VEBO (VEBO 15V).

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

100

Collector current (pulse)

Collector dissipation

Junction temperature

Storage temperature

I^cp

200

P^C

200

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VCB = 40V, IE=0

Min

Typ

Max

0.1

Unit

ìA

Collector cutoff current

I^CBO

I^EBO

h^FE

f^T

Emitter cutoff current

VEB = 10V, IC=0

0.1

ìA

DC current gain

VCE =5V , IC = 10mA

VCE = 10V , IC = 10mA

VCB = 10V , f = 1.0MHz

800 1500 3200

Gain bandwidth product

200

1.5

MHz

Output capacitance

C^ob

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V^CE(sat)IC = 50mA , IB = 1mA

V^BE(sat)IC = 50mA , IB = 1mA

V^(BR)CBOIC = 10ìA , IE = 0

0.1

0.8

0.5

1.1

V^(BR)CEO

IC = 1mA , RBE =

V^(BR)EBOIE = 10ìA , IC = 0

Marking

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