Datasheet > 2SC3693_2014

2SC3693_2014

更新时间： 2022-02-26 13:15:44

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锦美电子 - JMNIC		/
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描述
Silicon NPN Transistors

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数据手册

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2SC3693_2014 数据手册

Power Transistors

www.jmnic.com

2SC3693

Silicon NPN Transistors

ꢀFeatures

B C E

﹒With TO-220Fa package

﹒High speed ,power switching applications

ꢀAbsolute Maximum Ratings Tc=25℃

SYMBOL

PARAMETER

RATING

UNIT

V_CBO

Collector to base voltage

100

V_CEO

V_EBO

I_C

Collector to emitter voltage

Emitter to base voltage

Collector current

P_C

Collector power dissipation

Junction temperature

Storage temperature

℃

T_j

150

T_stg

-55~150

TO-220Fa

ꢀElectrical Characteristics Tc=25℃

SYMBOL

PARAMETER

CONDITIONS

MIN

Typ.

MAX

UNIT

I_CBO

Collector cut-off current

V_CB=60V; I_E=0

I_EBO

I_CEO

Emitter cut-off current

V_EB=5V; I_C=0

Collector cut-off current

V_CBO

Collector-base breakdown voltage

Collector-emitter Sustaining voltage

Emitter-base breakdown voltage

Collector-emitter saturation voltages

Forward current transfer ratio

Base-emitter saturation voltages

Transition frepuency

V_CEO(SUS)

V_EBO

I_C=30mA; I_B=0

I_C=8A; I_B=0.4A

I_C=2A; V_CE=2V

I_C=8A; I_B=0.4A

V_CE(sat-1)

V_CE(sat-2)

h_FE-1

0.5

400

1.5

100

h_FE-2

V_BE(sat)1

V_BE(sat)2

f_T

I_C=1A; V_CE=10V

140

150

MHz

C_ob

Collector Out put Capacitance

I_C=0, V_CB=10V f=1MHz

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