2SC2905 PDF预览

2SC2905

更新时间: 2025-08-19 12:50:03
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

2SC2905 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CXFM-X6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.13
Is Samacsys:N最大集电极电流 (IC):15 A
基于收集器的最大容量:150 pF集电极-发射极最大电压:17 V
配置:Single最小直流电流增益 (hFE):10
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-CXFM-X6
端子数量:6最高工作温度:175 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):120 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SC2905 数据手册

  
2SC2905  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI 2SC2905 is designed for  
high power amplifier applications in  
UHF band.  
PACKAGE STYLE .500 6L FLG  
FEATURES:  
A
C
Emitter Ballasted construction.  
PG = 4.8 dB at 45 W/520 MHz  
Omnigold™ Metalization System  
Common Emitter  
2x ØN  
FULL R  
D
B
E
.725/18,42  
F
G
M
MAXIMUM RATINGS  
K
H
I
L
J
15 A  
35 V  
IC  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.150 / 3.43  
.160 / 4.06  
A
B
C
D
E
F
G
H
I
VCBO  
VCEO  
VCES  
VEBO  
PDISS  
TJ  
.045 / 1.14  
.210 / 5.33  
.835 / 21.21  
.200 / 5.08  
.490 / 12.45  
.003 / 0.08  
.220 / 5.59  
.865 / 21.97  
.210 / 5.33  
.510 / 12.95  
.007 / 0.18  
17 V  
36 V  
.125 / 3.18  
4.0 V  
.725 / 18.42  
.970 / 24.64  
.090 / 2.29  
.150 / 3.81  
.980 / 24.89  
.105 / 2.67  
.170 / 4.32  
.285 / 7.24  
.135 / 3.43  
J
K
L
120 W @ TC = 25°C  
-55 °C to +175 °C  
-55 °C to +175 °C  
1.0 °C/W  
M
N
.120 / 3.05  
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 1.0 A  
IC = 10 mA  
IE = 10 mA  
17  
V
35  
BVCBO  
BVEBO  
ICBO  
4.0  
V
V
V
V
CB = 15 V  
CE = 3.0 V  
CE = 10 V  
2.0  
3.0  
200  
mA  
mA  
---  
IEBO  
IC = 1.0 A  
10  
hFE  
VCB = 12.5 V  
VCE = 12.5 V  
f = 1.0 MHz  
f = 520 MHz  
150  
Cob  
pF  
4.8  
60  
PG  
dB  
%
POUT = 45 W  
65  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

与2SC2905相关器件

型号 品牌 获取价格 描述 数据表
2SC2908 MOSPEC

获取价格

POWER TRANSISTORS(5.0A,100V,50W)
2SC2908 SAVANTIC

获取价格

Silicon NPN Power Transistors
2SC2908 ISC

获取价格

Silicon NPN Power Transistors
2SC2908K MOSPEC

获取价格

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR
2SC2908L MOSPEC

获取价格

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR
2SC2908M MOSPEC

获取价格

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR
2SC2909 SANYO

获取价格

High-Voltage Switching, AF 60W Predriver Applications
2SC2909 FOSHAN

获取价格

TO-92
2SC2909R ETC

获取价格

TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 70MA I(C) | TO-92
2SC2909S ETC

获取价格

TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 70MA I(C) | TO-92