Datasheet > 2SC2914

2SC2914

更新时间： 2024-11-25 06:18:15

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	114K
描述
Silicon NPN Power Transistors

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中文翻译

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2SC2914 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2914

DESCRIPTION

·With TO-3 package

·High breakdown voltage

·Fast switching speed.

·Wide area of safe operation

APPLICATIONS

·For switching regulator applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

500

UNIT

Open emitter

Open base

400

Open collector

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

120

ꢀ

150

T_j

-55~150

ꢀ

T_stg

12 3

中文翻译

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