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2SC2908 PDF预览

2SC2908

更新时间: 2024-11-21 07:30:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
4页 133K
描述
Silicon NPN Power Transistors

2SC2908 数据手册

 浏览型号2SC2908的Datasheet PDF文件第2页浏览型号2SC2908的Datasheet PDF文件第3页浏览型号2SC2908的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2908  
DESCRIPTION  
·
·With TO-3PN package  
·Low collector saturation voltage  
APPLICATIONS  
·For use in power amplifier and  
switching circuits applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-3PN) and symbol  
3
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
200  
100  
12  
UNIT  
V
Open base  
V
Open collector  
V
5.0  
A
ICM  
Collector current-peak  
Base current  
10  
A
IB  
2.5  
A
TC=25  
50  
W
PC  
Collector power dissipation  
Derate above 25℃  
0.4  
W/℃  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction case  
2.5  
/W  

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