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2SC2910S-AE

更新时间： 2024-11-21 14:48:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 57K
描述
TRANSISTOR,BJT,NPN,160V V(BR)CEO,70MA I(C),TO-92VAR

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中文翻译

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2SC2910S-AE 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：,Reach Compliance Code：compliant
Factory Lead Time：1 week风险等级：5.57
最大集电极电流 (IC)：0.07 A配置：Single
最小直流电流增益 (hFE)：140最高工作温度：150 °C
极性/信道类型：NPN最大功率耗散 (Abs)：0.9 W
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)Base Number Matches：1

2SC2910S-AE 数据手册

 浏览型号2SC2910S-AE的Datasheet PDF文件第2页浏览型号2SC2910S-AE的Datasheet PDF文件第3页浏览型号2SC2910S-AE的Datasheet PDF文件第4页 
Ordering number:ENN781G  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SA1208/2SC2910  
High-Voltage Switching  
Audio 80W Output Predriver Applications  
Features  
Package Dimensions  
unit:mm  
· Adoption of FBET process.  
· High breakdown voltage.  
2006B  
· Excellent linearity of h and small C .  
· Fast swtching speed.  
FE  
ob  
[2SA1208/2SC2910]  
6.0  
5.0  
4.7  
0.5  
0.6  
0.5  
0.5  
2
3
1
1 : Emitter  
2 : Collector  
3 : Base  
( ) : 2SA1208  
Specifications  
1.45  
1.45  
SANYO : MP  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
(–)180  
(–)160  
(–)5  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
V
EBO  
I
(–)70  
(–)140  
900  
mA  
mA  
mW  
˚C  
C
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
I
CP  
P
C
Tj  
150  
Tstg  
–55 to +150  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
V
V
V
V
=(–)80V, I =0  
E
=(–)4V, I =0  
C
=(–)5V, I =(–)10mA  
C
=(–)10V, I =(–)10mA  
C
(–)0.1  
(–)0.1  
400*  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CB  
Emitter Cutoff Current  
DC Current Gain  
I
EBO  
h
100*  
FE  
Gain-Bandwidth Product  
Output Capacitance  
f
150  
MHz  
pF  
T
C
=(–)10V, f=1MHz  
(2.5)2.0  
0.08  
ob  
0.3  
Collector-to-Emitter Saturation Voltage  
V
I
=(–)30mA, I =(–)3mA  
V
CE(sat)  
C
B
(–0.14) (–0.4)  
* : The 2SA1208/2SC2910 are classified by 10mA h are follows :  
Continued on next page.  
FE  
Rank  
R
S
T
h
100 to 200 140 to 280 200 to 400  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
70502TN (KT)/71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4  
1234

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 		TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 140MA I(C) | TO-126
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 		TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 140MA I(C) | TO-126
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 		TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 140MA I(C) | TO-126
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