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2SC2910R PDF预览

2SC2910R

更新时间: 2024-11-20 23:20:11
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 126K
描述
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 70MA I(C) | TO-92VAR

2SC2910R 数据手册

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Ordering number:EN781F  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SA1208/2SC2910  
High-Voltage Switching  
Audio 80W Output Predriver Applications  
Features  
Package Dimensions  
unit:mm  
· Adoption of FBET process.  
· High breakdown voltage.  
2006A  
· Excellent linearity of h and small C .  
· Fast swtching speed.  
FE  
ob  
[2SA1208/2SC2910]  
B:Base  
EIAJ:SC-51  
SANYO:MP  
( ) : 2SA1208  
C:Collector  
E:Emitter  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
(–)180  
(–)160  
(–)5  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
V
EBO  
I
(–)70  
(–)140  
900  
mA  
mA  
mW  
˚C  
C
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
I
CP  
P
C
Tj  
150  
Tstg  
–55 to +150  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
V
V
V
V
I
=(–)80V, I =0  
E
=(–)4V, I =0  
C
=(–)5V, I =(–)10mA  
C
=(–)10V, I =(–)10mA  
C
(–)0.1  
(–)0.1  
400*  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CB  
Emitter Cutoff Current  
I
EBO  
DC Current Gain  
h
100*  
FE  
Gain-Bandwidth Product  
Output Capacitance  
f
150  
MHz  
pF  
T
C
=(–)10V, f=1MHz  
(2.5)2.0  
ob  
Collector-to-Emitter Saturation Voltage  
V
=(–)30mA, I =(–)3mA  
0.08  
(–0.14)  
0.3  
(–0.4)  
V
CE(sat)  
C
B
Turn-ON Time  
Fall Time  
t
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
0.1  
0.2  
1.0  
µs  
µs  
µs  
on  
t
f
Storage Time  
t
stg  
* : The 2SA1208/2SC2910 are classified by 10mA h are follows :  
FE  
Switching Time Test Circuit  
100  
R
200  
140  
S
280  
200  
T
400  
I =10I =–10I =10mA (For PNP, the polarity is reversed)  
C
B1  
B2  
Unit (resistance : , capacitance : F)  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4  

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