Datasheet > 2SC2412_11

2SC2412_11

更新时间： 2024-11-25 12:50:07

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	461K
描述
NPN Epitaxial Planar Transistor

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数据手册

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2SC2412_11 数据手册

2SC2412

0.15A , 60V

NPN Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURE

ꢀ

Low C_ob, C_ob=2.0pF

Complements of the 2SA1037

ꢀ

Top View

C B

CLASSIFICATION OF h_FE

Product-Rank

2SC2412-Q

120~270

2SC2412-R

2SC2412-S

270~560

Range

180~390

Marking Code

Millimeter

Min. Max.

PACKAGE INFORMATION

REF.

Min.

Max.

3.04

2.55

1.40

1.15

2.04

0.50

2.80

2.10

1.20

0.89

1.78

0.30

0.09

0.45

0.08

0.18

0.60

0.177

Package

MPQ

LeaderSize

7’ inch

0.6 REF.

SOT-23

0.89

1.02

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector to Emitter Voltage

Emitter to Base Voltage

150

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

°C

P_C

200

T_J, T_STG

150, -55 ~ 150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=50µA, I_E=0

I_C=1mA, I_B=0

I_E=50µA, I_C=0

V_CB=60V, I_E=0

V_EB=7V, I_C=0

0.1

560

0.4

µA

Emitter Cut-Off Current

I_EBO

DC Current Gain

h_FE

120

V_CE=6V, I_C=1mA

I_C=50mA, I_B=5mA

Collector to Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

f_T

160

2.0

MHz V_CE=12V, I_C= -2mA, f=100MHz

pF V_CB=12V, I_E=0, f=1MHz

Collector Output Capacitance

C_ob

3.5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

18-Feb-2011 Rev. B

Page 1 of 3

12 3

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