Datasheet > 2SC2412K

2SC2412K

更新时间： 2024-11-27 05:57:55

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
3页	104K
描述
General Purpose Transistor

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中文翻译

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数据手册

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2SC2412K 数据手册

SMD Type

TransistIoCrs

General Purpose Transistor

2SC2412K

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low Cob.Cob=2.0pF (Typ.)

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector current

0.15

Collector power dissipation

Junction temperature

Storage temperature

0.2

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

IC=50ìA

IC=1mA

IE=50ìA

VCB=60V

VEB=7V

0.1

560

0.4

3.5

Emitter cutoff current

DC current Gain

VCE=6V, IC=1mA

120

Collector-emitter saturation voltage

Collector Output Capacitance

Transition frequency

VCE(sat) IC/IB=50mA/5mA

Cob

VCE=12V, IE=0A, f=1MHz

VCE=12V, IE=-2mA, f=100MHz

180

MHz

hFE Classification

Marking

Rank

hFE

120 270

180 390

270 560

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2SC2412KBE	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 200MA I(C) \| SOT-23
2SC2412KBQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 200MA I(C) \| SOT-23
2SC2412KBR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 200MA I(C) \| SOT-23
2SC2412KBS	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 200MA I(C) \| SOT-23
2SC2412KLN	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 150MA I(C) \| SOT-23VAR