Datasheet > 2SC2412K

2SC2412K

更新时间： 2024-10-30 12:54:35

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
2页	121K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

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数据手册

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2SC2412K 数据手册

RoHS

2SC2412K

NP N EP ITAXIAL S ILICON TRANS IS TOR

GENERAL PURPOSE TRANSISTOR

Feature:

(1) Low Cob.

Cob=2.0pF

(2) Complements the 2SA1037AK/2SA1576/

2SA1774/2SA1774H/2SA2029/2SA933AS.

1.BASE

2.EMITTER

2.4

1.3

3.COLLECTOR

ABSOLUTE MAXIMUM RATINGS at Ta=25

Characteristic

Collector-Emitter Voltage

Collector-Base Voltage

Collector Current

Symbol

Vceo

Vcbo

Rating

Unit

Unit:mm

0.15

200

Collector Dissipation Ta=25

P_D

Junction Temperature

Storage Temperature

150

Tstg

-55-150

ELECTRICAL CHARACTERISTICS at Ta=25

Characteristic

Symbol Min Typ

Max Unit

Test Conditions

Ic= 50uA

Collector-Base Breakdown Voltage

BVcbo

BVceo

Collector-Emitter

Voltage#

Breakdown

Ic= 1mA

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

DC Current Gain

BVebo

Icbo

Ie= 50uA

0.1

560

0.4

3.5

Vcb= 60V

Iebo

Hfe

Veb=7V

120

Vce= 6V Ic= 1mA

Ic= 50mA Ib= 5mA

Vcb= 12V Ie=0 f=1MHz

Collector-Emitter Saturation Voltage Vce(sat)

Output Capacitance

Cob

f_T

Current Gain-Bandwidth Product

180

MHz Vce= 12V Ie= -2mA

f=100MHZ

Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25

Pulse Test: Pulse Width

DEVICE MARKING:

2SC2412K=HF

300uS,Duty cycle 2%

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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