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2SC2412K_15 PDF预览

2SC2412K_15

更新时间: 2024-10-31 01:23:59
品牌 Logo 应用领域
永而佳 - WINNERJOIN /
页数 文件大小 规格书
2页 121K
描述
NPN EPITAXIAL SILICON TRANSISTOR

2SC2412K_15 数据手册

 浏览型号2SC2412K_15的Datasheet PDF文件第2页 
RoHS  
2SC2412K  
NP N EP ITAXIAL S ILICON TRANS IS TOR  
GENERAL PURPOSE TRANSISTOR  
*
Feature:  
(1) Low Cob.  
Cob=2.0pF  
(2) Complements the 2SA1037AK/2SA1576/  
2SA1774/2SA1774H/2SA2029/2SA933AS.  
1.  
1.BASE  
2.EMITTER  
2.4  
1.3  
3.COLLECTOR  
ABSOLUTE MAXIMUM RATINGS at Ta=25  
Characteristic  
Collector-Emitter Voltage  
Collector-Base Voltage  
Collector Current  
Symbol  
Vceo  
Vcbo  
Ic  
Rating  
50  
Unit  
V
60  
V
Unit:mm  
0.15  
200  
A
Collector Dissipation Ta=25  
*
PD  
mW  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS at Ta=25  
Characteristic  
Symbol Min Typ  
Max Unit  
Test Conditions  
Ic= 50uA  
Collector-Base Breakdown Voltage  
BVcbo  
BVceo  
60  
50  
V
V
Collector-Emitter  
Voltage#  
Breakdown  
Ic= 1mA  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
Emitter-Base Cutoff Current  
DC Current Gain  
BVebo  
Icbo  
7
V
Ie= 50uA  
0.1  
0.1  
560  
0.4  
3.5  
uA  
uA  
Vcb= 60V  
Iebo  
Hfe  
Veb=7V  
120  
Vce= 6V Ic= 1mA  
Ic= 50mA Ib= 5mA  
Vcb= 12V Ie=0 f=1MHz  
Collector-Emitter Saturation Voltage Vce(sat)  
V
Output Capacitance  
Cob  
fT  
2
PF  
Current Gain-Bandwidth Product  
180  
MHz Vce= 12V Ie= -2mA  
f=100MHZ  
*
Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25  
.
#
Pulse Test: Pulse Width  
DEVICE MARKING:  
2SC2412K=HF  
300uS,Duty cycle 2%  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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