Datasheet > 2SC2412KLT1

2SC2412KLT1

更新时间： 2022-11-24 21:45:11

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	182K
描述
General Purpose Transistors(NPN Silicon)

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数据手册

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2SC2412KLT1 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

2SC2412K*LT1

COLLECTOR

BASE

EMITTER

CASE 318–07, STYLE 6

SOT– 23 (TO–236AB)

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Collector power dissipation

Junction temperature

Storage temperature

7.0

150

0.2

mAdc

P _C

T _j

150

°C

T _stg

-55

+150

°C

DEVICE MARKING

2SC2412K*LT1 =G1F

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(I_C= 1 mA)

V _(BR)CEO

—

Emitter–Base Breakdown Voltage

(I_E= 50 µA)

V _(BR)EBO

V _(BR)CBO

I _CBO

—

Collector–Base Breakdown Voltage

(I_C= 50 µA)

—

Collector Cutoff Current

(V_CB= 60 V)

0.1

µA

Emitter cutoff current

I _EBO

(V_EB= 7 V)

Collector-emitter saturation voltage

(I_C/ I_B= 50 mA / 5m A)

DC current transfer ratio

(V _CE= 6 V, I _C= 1mA)

Transition frequency

V _CE(sat)

h _FE

—

0.4

120

––

560

––

f _T

—

180

2.0

––

MHz

(V _CE= 12 V, I _E= – 2mA, f =30MHz )

Output capacitance

C _ob

3.5

(V _CB= 12 V, I _E= 0A, f =1MHz )

h _FEvalues are classified as follows:

hFE

120~270

180~390

270~560

M36–1/3

12 3

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