Datasheet > 2SC2412K

2SC2412K

更新时间： 2024-10-31 14:52:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1205K
描述
SOT-23-3L

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中文翻译

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数据手册

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2SC2412K 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23-3L Plastic-Encapsulate Transistors

SOT-23-3L

2SC2412K TRANSISTOR (NPN)

FEATURES

· Low C_ob,C_ob= 2.0 pF (Typ).

1. BASE

2. EMITTER

3. COLLECTOR

MARKING : BQ, BR, BS

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Equivalent Circuit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

150

℃/W

℃

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

400

R_ΘJA

312.5

-55～+150

T_J,T_stgOperation Junction and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=50μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=50μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=60V,I_E=0

0.1

560

0.4

μA

Emitter cut-off current

V_EB=7V,I_C=0

DC current gain

V_CE=6V,I_C=1mA

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=50mA,I_B=5mA

V_CE=12V,I_C=-2mA,f=100MHz

V_CB=12V,I_E=0,f=1MHz

MHz

150

Collector output capacitance

C_ob

2.0

3.5

CLASSIFICATION OF h_FE

120 - 270

180 - 390

Rank

270 - 560

Range

Marking

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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