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2SC1360A PDF预览

2SC1360A

更新时间: 2024-09-24 22:45:07
品牌 Logo 应用领域
松下 - PANASONIC 电视
页数 文件大小 规格书
2页 40K
描述
Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image)

2SC1360A 数据手册

 浏览型号2SC1360A的Datasheet PDF文件第2页 
Transistor  
2SC1360, 2SC1360A  
Silicon NPN epitaxial planer type  
For intermadiate frequency amplification of TV image  
Unit: mm  
5.9±0.2  
4.9±0.2  
Features  
High transition frequency fT.  
Large collector power dissipation PC.  
0.7±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
2.54±0.15  
Parameter  
Symbol  
Ratings  
Unit  
Collector to  
2SC1360  
2SC1360A  
2SC1360  
50  
VCBO  
V
base voltage  
Collector to  
60  
45  
VCEO  
V
0.45+00..12  
0.45+00..12  
emitter voltage 2SC1360A  
Emitter to base voltage  
Collector current  
60  
1.27  
1.27  
VEBO  
IC  
4
V
mA  
W
1:Emitter  
50  
2:Collector  
3:Base  
1
2
3
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
EIAJ:SC–51  
TO–92L Package  
Tj  
150  
˚C  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = 20V, IE = 0  
100  
nA  
Collector to base  
voltage  
2SC1360  
2SC1360A  
50  
60  
45  
60  
4
VCBO  
IC = 100µA, IE = 0  
V
Collector to emitter 2SC1360  
VCEO  
IC = 1mA, IB = 0  
V
V
voltage  
2SC1360A  
Emitter to base voltage  
VEBO  
hFE  
IE = 100µA, IC = 0  
Forward current transfer ratio  
VCB = 10V, IE = –10mA  
20  
100  
0.4  
Collector to emitter saturation voltage VCE(sat)  
Transition frequency fT  
IC = 20mA, IB = 2mA  
V
MHz  
pF  
VCB = 10V, IE = –10mA, f = 100MHz  
VCE = 10V, IC = 1mA, f = 10.7MHz  
VCB = 10V, IE = –10mA, f = 58MHz  
300  
22  
Common emitter reverse transfer capacitance Cre  
1.5  
30  
Power gain  
PG  
dB  
1

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