Datasheet > 2SC1383R

2SC1383R

更新时间： 2024-02-10 13:38:24

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	73K
描述
TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 1A I(C) \| TO-92VAR

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2SC1383R 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.84

2SC1383R 数据手册

Transistor

2SC1383, 2SC1384

Silicon NPN epitaxial planer type

For low-frequency power amplification and driver amplification

Complementary to 2SA0683 (2SA683) and 2SA0684 (2SA684)

Unit: mm

5.9 0.2

4.9 0.2

Features

Low collector to emitter saturation voltage V_CE(sat)

Complementary pair with 2SA0683 and 2SA0684.

0.7 0.1

Absolute Maximum Ratings (Ta=25˚C)

2.54 0.15

Parameter

Collector to

Symbol

Ratings

Unit

2SC1383

2SC1384

2SC1383

V_CBO

base voltage

Collector to

V_CEO

0.45^+–0.2¹

0.45⁺–0⁰.^.1²

emitter voltage 2SC1384

Emitter to base voltage

Peak collector current

Collector current

1.27

V_EBO

I_CP

I_C

1:Emitter

1.5

2:Collector

3:Base

EIAJ:SC–51

TO–92L Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CB= 20V, I_E= 0

0.1

µA

Collector to base

voltage

2SC1383

2SC1384

V_CBO

I_C= 10µA, I_E= 0

Collector to emitter 2SC1383

V_CEO

V_EBO

I_C= 2mA, I_B= 0

voltage

2SC1384

Emitter to base voltage

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 10V, I_C= 500mA^*2

160

100

0.2

340

Forward current transfer ratio

V_CE= 5V, I_B= 1A^*2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 500mA, I_B= 50mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

0.4

1.2

0.85

200

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

FE1

Rank classification

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

Note.) The Part numbers in the Parenthesis show conventional part number.

12 3 4

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