Datasheet > 2SC1384

2SC1384

更新时间： 2024-09-14 14:53:07

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	656K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SC1384 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	50
Collector Current - Continuous：	1	DC current gain - Min：	85
DC current gain - Max：	340	Transition frequency：	200
Package：	TO-92L	Storage Temperature Range：	-55-150
class：	Transistors

2SC1384 数据手册

2SC1383/2SC1384

TO-92MOD Transistor (NPN)

1.EMITTER

2.COLLECTOR

3.BASE

TO-92MOD

5.800

6.200

8.400

8.800

0.900

1.100

Features

0.400

0.600

Low collector to emitter saturation voltage V_CE(sat).

Complementary pair with 2SA0683 and 2SA0684.

13.800

14.200

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

1.500 TYP

2.900

3.100

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

2SC1383

2SC1384

Units

0.000

0.380

1.600

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

0.400

0.500

4.700

5.100

1.730

2.030

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

4.000

Dimensions in inches and (millimeters)

P_C

℃

T_J

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage 2SC1383

V_(BR)CBO

I_C=10μA ,I_E=0

2SC1384

Collector-emitter breakdown voltage 2SC1383

2SC1384

V_(BR)CEO

I_C=2mA , I_B=0

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)EBO

I_CBO

I_E= 10μA, I_C=0

V_CB=20V, I_E=0

0.1

μA

h_FE(1)

V_CE=10V, I_C=500mA

V_CE=5V, I_C=1A

340

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

I_C=500m A,I_B=50mA

I_C=500mA,I_B=50mA

0.4

1.2

Transition frequency

f_T

V_CE=10V,I_C=50mA

200

MHz

CLASSIFICATION OF h^FE

(1)

Rank

Range

85-170

120-240

170-340

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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