5秒后页面跳转
2SC1384 PDF预览

2SC1384

更新时间: 2024-02-18 16:44:01
品牌 Logo 应用领域
松下 - PANASONIC 驱动
页数 文件大小 规格书
3页 50K
描述
Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

2SC1384 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
最大集电极电流 (IC):1 A配置:Single
最小直流电流增益 (hFE):170最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):1 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):100 MHzBase Number Matches:1

2SC1384 数据手册

 浏览型号2SC1384的Datasheet PDF文件第2页浏览型号2SC1384的Datasheet PDF文件第3页 
Transistor  
2SC1383, 2SC1384  
Silicon NPN epitaxial planer type  
For low-frequency power amplification and driver amplification  
Complementary to 2SA683 and 2SA684  
Unit: mm  
5.9±0.2  
4.9±0.2  
Features  
Low collector to emitter saturation voltage VCE(sat)  
.
Complementary pair with 2SA683 and 2SA684.  
0.7±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
2.54±0.15  
Parameter  
Symbol  
Ratings  
Unit  
Collector to  
2SC1383  
2SC1384  
2SC1383  
30  
VCBO  
V
base voltage  
Collector to  
60  
25  
VCEO  
V
0.45+00..12  
0.45+00..12  
emitter voltage 2SC1384  
Emitter to base voltage  
Peak collector current  
Collector current  
50  
1.27  
1.27  
VEBO  
ICP  
IC  
5
V
A
1:Emitter  
1.5  
2:Collector  
3:Base  
1
2
3
1
A
EIAJ:SC–51  
TO–92L Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
W
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = 20V, IE = 0  
0.1  
µA  
Collector to base  
voltage  
2SC1383  
2SC1384  
30  
60  
25  
50  
5
VCBO  
IC = 10µA, IE = 0  
V
Collector to emitter 2SC1383  
VCEO  
VEBO  
IC = 2mA, IB = 0  
V
V
voltage  
2SC1384  
Emitter to base voltage  
IE = 10µA, IC = 0  
*1  
hFE1  
hFE2  
VCE = 10V, IC = 500mA*2  
VCE = 5V, IB = 1A*2  
85  
50  
160  
100  
0.2  
340  
Forward current transfer ratio  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 500mA, IB = 50mA*2  
IC = 500mA, IB = 50mA*2  
VCB = 10V, IE = –50mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
0.4  
1.2  
V
V
0.85  
200  
11  
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
20  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
Q
R
S
85 ~ 170  
120 ~ 240  
170 ~ 340  
1

与2SC1384相关器件

型号 品牌 描述 获取价格 数据表
2SC1384(TO-92MOD) JCST Transistor

获取价格

2SC1384_08 UTC NPN SILICON TRANSISTOR

获取价格

2SC1384_11 UTC NPN SILICON TRANSISTOR

获取价格

2SC13840Q PANASONIC Silicon NPN epitaxial planar type

获取价格

2SC1384G-X-AB3-R UTC NPN SILICON TRANSISTOR

获取价格

2SC1384G-X-T9N-B UTC NPN SILICON TRANSISTOR

获取价格