Transistor
2SC1383, 2SC1384
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA0683 (2SA683) and 2SA0684 (2SA684)
Unit: mm
5.9 0.2
4.9 0.2
Features
I
G
Low collector to emitter saturation voltage VCE(sat)
.
G
Complementary pair with 2SA0683 and 2SA0684.
0.7 0.1
Absolute Maximum Ratings (Ta=25˚C)
I
2.54 0.15
Parameter
Collector to
Symbol
Ratings
Unit
2SC1383
2SC1384
2SC1383
30
VCBO
V
base voltage
Collector to
60
25
VCEO
V
0.45+–0.21
0.45+–00..12
emitter voltage 2SC1384
Emitter to base voltage
Peak collector current
Collector current
50
1.27
1.27
VEBO
ICP
IC
5
V
A
1:Emitter
1.5
2:Collector
3:Base
1
2
3
1
A
EIAJ:SC–51
TO–92L Package
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
VCB = 20V, IE = 0
0.1
µA
Collector to base
voltage
2SC1383
2SC1384
30
60
25
50
5
VCBO
IC = 10µA, IE = 0
V
Collector to emitter 2SC1383
VCEO
VEBO
IC = 2mA, IB = 0
V
V
voltage
2SC1384
Emitter to base voltage
IE = 10µA, IC = 0
*1
hFE1
hFE2
VCE = 10V, IC = 500mA*2
85
50
160
100
0.2
340
Forward current transfer ratio
VCE = 5V, IB = 1A*2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 500mA, IB = 50mA*2
IC = 500mA, IB = 50mA*2
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
0.4
1.2
V
V
0.85
200
11
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
20
*2 Pulse measurement
*1
h
FE1
Rank classification
Rank
hFE1
Q
R
S
85 ~ 170
120 ~ 240
170 ~ 340
Note.) The Part numbers in the Parenthesis show conventional part number.
1