Datasheet > 2SC1383L_11

2SC1383L_11

更新时间： 2022-09-17 09:16:24

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	673K
描述
NPN Silicon General Purpose Transistor

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数据手册

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2SC1383L_11 数据手册

2SC1383L / 2SC1384L

NPN Silicon

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92L

FEATURE

ꢀ

Low collector to emitter saturation voltage V_CE(sat)

Complementary pair with 2SA683 and 2SA684.

ꢀ

1Emitter

2Collector

3Base

CLASSIFICATION OF h_FE(1)

Millimeter

REF.

Min.

4.70

7.80

13.80

3.70

0.35

Max.

5.10

8.20

14.20

4.10

0.55

0.45

Product-Rank 2SC1383L-Q 2SC1383L-R 2SC1383L-S

Product-Rank 2SC1384L-Q 2SC1384L-R 2SC1384L-S

Range

85~170

120~240

170~340

1.27 TYP.

1.28

2.44

0.60

1.58

2.64

0.80

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

2SC1383L

2SC1384L

2SC1383L

2SC1384L

Collector to Base Voltage

V_CBO

Collector to Emitter Voltage

V_CEO

Emitter to Base Voltage

V_EBO

I_C

Continuous Collector Current

Collector Power Dissipation

Junction, Storage Temperature

P_C

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown 2SC1383L

V_(BR)CBO

I_C=10µA, I_E=0

Voltage

2SC1384L

2SC1383L

2SC1384L

Collector to Emitter

Breakdown Voltage

V_(BR)CEO

I_C=2mA, I_B=0

Emitter to Base Breakdown Voltage

Collector Cut - Off Current

V_(BR)EBO

I_CBO

I_E=10µA, I_C=0

0.1

340

µA

V_CB=20V, I_E=0

h_{FE (1)}

h_{FE (2)}

V_CE(sat)

V_BE(sat)

f_T

V_CE=10V, I_C=500mA

V_CE=5V, I_C=1A

DC Current Gain

Collector to Emitter Saturation Voltage

Base – Emitter Saturation Voltage

Transition Frequency

0.4

1.2

I_C=500mA, I_B=50mA

V_CE=10V, I_C=50mA

200

MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

28-Jan-2011 Rev. B

Page 1 of 2

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