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2SC1383 PDF预览

2SC1383

更新时间: 2024-10-31 14:53:07
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
3页 656K
描述
双极型晶体管

2SC1383 技术参数

极性:NPNCollector-emitter breakdown voltage:25
Collector Current - Continuous:1DC current gain - Min:85
DC current gain - Max:340Transition frequency:200
Package:TO-92LStorage Temperature Range:-55-150
class:Transistors

2SC1383 数据手册

 浏览型号2SC1383的Datasheet PDF文件第2页浏览型号2SC1383的Datasheet PDF文件第3页 
2SC1383/2SC1384  
TO-92MOD Transistor (NPN)  
1.EMITTER  
2.COLLECTOR  
3.BASE  
TO-92MOD  
1
2
3
5.800  
6.200  
8.400  
8.800  
0.900  
1.100  
Features  
0.400  
0.600  
Low collector to emitter saturation voltage VCE(sat).  
Complementary pair with 2SA0683 and 2SA0684.  
—
—
13.800  
14.200  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
1.500 TYP  
2.900  
3.100  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
2SC1383  
2SC1384  
Units  
V
0.000  
0.380  
1.600  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
25  
60  
50  
0.400  
0.500  
4.700  
5.100  
V
5
1
V
1.730  
2.030  
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
A
4.000  
Dimensions in inches and (millimeters)  
PC  
1
W
TJ  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage 2SC1383  
30  
60  
25  
50  
V(BR)CBO  
IC=10μA ,IE=0  
2SC1384  
Collector-emitter breakdown voltage 2SC1383  
2SC1384  
V(BR)CEO  
IC=2mA , IB=0  
V
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)EBO  
ICBO  
IE= 10μA, IC=0  
5
V
VCB=20V, IE=0  
0.1  
μA  
hFE(1)  
VCE=10V, IC=500mA  
VCE=5V, IC=1A  
85  
50  
340  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
IC=500m A,IB=50mA  
IC=500mA,IB=50mA  
0.4  
1.2  
V
V
Transition frequency  
fT  
VCE=10V,IC=50mA  
200  
MHz  
CLASSIFICATION OF hFE  
(1)  
Rank  
Q
R
S
Range  
85-170  
120-240  
170-340  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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