JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SC1383
2SC1384
TRANSISTOR (NPN)
TO-92L
FEATURES
z
Low Collector to Emitter Saturation Voltage VCE(sat).
Complementary Pair with 2SA0683 and 2SA0684.
1.EMITTER
2.COLLECTOR
3.BASE
z
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
2SC1383
2SC1384
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
25
60
50
V
5
1
V
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
A
PC
1
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage 2SC1383
30
60
25
50
V(BR)CBO
IC=10μA ,IE=0
V
2SC1384
Collector-emitter breakdown voltage 2SC1383
2SC1384
V(BR)CEO
IC=2mA , IB=0
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE= 10μA, IC=0
5
V
VCB=20V, IE=0
0.1
μA
hFE(1)
VCE=10V, IC=500mA
VCE=5V, IC=1A
85
50
340
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
IC=500m A,IB=50mA
IC=500mA,IB=50mA
0.4
1.2
V
V
Transition frequency
fT
VCE=10V,IC=50mA
200
MHz
CLASSIFICATION OF hFE
(1)
Rank
Q
R
S
Range
85-170
120-240
170-340
A,Jun,2011