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2SC1360 PDF预览

2SC1360

更新时间: 2024-09-24 22:45:07
品牌 Logo 应用领域
松下 - PANASONIC 电视
页数 文件大小 规格书
2页 40K
描述
Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image)

2SC1360 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.83
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:135 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.65 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):500 MHz
Base Number Matches:1

2SC1360 数据手册

 浏览型号2SC1360的Datasheet PDF文件第2页 
Transistor  
2SC1360, 2SC1360A  
Silicon NPN epitaxial planer type  
For intermadiate frequency amplification of TV image  
Unit: mm  
5.9±0.2  
4.9±0.2  
Features  
High transition frequency fT.  
Large collector power dissipation PC.  
0.7±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
2.54±0.15  
Parameter  
Symbol  
Ratings  
Unit  
Collector to  
2SC1360  
2SC1360A  
2SC1360  
50  
VCBO  
V
base voltage  
Collector to  
60  
45  
VCEO  
V
0.45+00..12  
0.45+00..12  
emitter voltage 2SC1360A  
Emitter to base voltage  
Collector current  
60  
1.27  
1.27  
VEBO  
IC  
4
V
mA  
W
1:Emitter  
50  
2:Collector  
3:Base  
1
2
3
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
EIAJ:SC–51  
TO–92L Package  
Tj  
150  
˚C  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = 20V, IE = 0  
100  
nA  
Collector to base  
voltage  
2SC1360  
2SC1360A  
50  
60  
45  
60  
4
VCBO  
IC = 100µA, IE = 0  
V
Collector to emitter 2SC1360  
VCEO  
IC = 1mA, IB = 0  
V
V
voltage  
2SC1360A  
Emitter to base voltage  
VEBO  
hFE  
IE = 100µA, IC = 0  
Forward current transfer ratio  
VCB = 10V, IE = –10mA  
20  
100  
0.4  
Collector to emitter saturation voltage VCE(sat)  
Transition frequency fT  
IC = 20mA, IB = 2mA  
V
MHz  
pF  
VCB = 10V, IE = –10mA, f = 100MHz  
VCE = 10V, IC = 1mA, f = 10.7MHz  
VCB = 10V, IE = –10mA, f = 58MHz  
300  
22  
Common emitter reverse transfer capacitance Cre  
1.5  
30  
Power gain  
PG  
dB  
1

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