2SC1359

更新时间： 2024-02-23 05:50:49

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号双极晶体管
页数	文件大小	规格书
3页	54K
描述
Silicon NPN epitaxial planer type(For high-frequency amplification)

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技术参数
数据手册

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2SC1359 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

2SC1359 数据手册

Transistor

2SC1359

Silicon NPN epitaxial planer type

For high-frequency amplification

Complementary to 2SA838

Unit: mm

4.0±0.2

5.0±0.2

Features

■

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency f_T.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

0.45–⁺0⁰.^.1²

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1.27

˚C

1 2 3

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

2.54±0.15

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

Collector cutoff current

Forward current transfer ratio

Transition frequency

Noise figure

V_CB= 10V, I_E= 0

µA

h_FE

f_T

V_CB= 10V, I_E= –1mA

220

V_CB= 10V, I_E= –1mA, f = 200MHz

V_CB= 10V, I_E= –1mA, f = 5MHz

150

250

2.8

MHz

Ω

Z_rb

Reverse transfer impedance

_CB= 10V, I_E= –1mA, f = 2MHz

1.5

Common emitter reverse transfer capacitance C_re

V_CE= 10V, I_C= 1mA, f = 10.7MHz

0.9

^*h_FERank classification

Rank

h_FE

70 ~ 140

110 ~ 220

12 3

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