Datasheet > 2SB931P

2SB931P

更新时间： 2024-11-16 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
4页	61K
描述
TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 3A I(C) \| TO-221VAR

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中文翻译

获取价格

数据手册

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2SB931P 数据手册

Power Transistors

2SB0931 (2SB931)

Silicon PNP epitaxial planar type

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

For power switching

1.0±0.1

Complementary to 2SD1254

Features

■

1.5max.

1.1max.

0.5max.

●

Low collector to emitter saturation voltage V_CE(sat)

Satisfactory linearity of foward current transfer ratio h_FE

●

0.8±0.1

●

Large collector current I_C

2.54±0.3

●

N type package enabling direct soldering of the radiating fin to

5.08±0.5

the printed circuit board, etc. of small electronic equipment.

1:Base

2:Collector

3:Emitter

N Type Package

Absolute Maximum Ratings (T =25˚C)

■

Unit: mm

3.4±0.3

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

8.5±0.2

6.0±0.3

1.0±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–130

–80

–7

–6

I_C

–3

R0.5

0.8±0.1

Collector power T_C=25°C

0 to 0.4

2.54±0.3

1.1 max.

P_C

5.08±0.5

dissipation

Ta=25°C

1.3

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

T_stg

–55 to +150

N Type Package (DS)

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–10

–50

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= –100V, I_E= 0

I_EBO

V_CEO

h_FE1

V_EB= –5V, I_C= 0

I_C= –10mA, I_B= 0

Collector to emitter voltage

–80

_CE= –2V, I_C= – 0.1A

Forward current transfer ratio

h_FE2

V_CE= –2V, I_C= – 0.5A

260

– 0.5

–1.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –2A, I_B= – 0.1A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= –10V, I_C= – 0.5A, f = 10MHz

0.3

1.1

0.3

MHz

µs

I_C= – 0.5A,

µs

I_B1= –50mA, I_B2= 50mA

µs

^*h_FE2Rank classification

Rank

h_FE2

90 to 180

130 to 260

Note) The part number in the parenthesis shows conventional part number.

12 3 4

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与2SB931P相关器件

型号	品牌	获取价格	描述	数据表
2SB931-P	KEXIN	获取价格	PNP Transistors
2SB931Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SB931-Q	KEXIN	获取价格	PNP Transistors
2SB931R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SB931TX	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB932	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type
2SB932	TYSEMI	获取价格	Low collector-emitter saturation voltage VCE(sat). Large collector current IC.
2SB932	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power switching)
2SB932_15	KEXIN	获取价格	PNP Transistors
2SB932H	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2