Datasheet > 2SB933

2SB933

更新时间： 2024-11-20 06:22:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	40K
描述
Silicon PNP Epitaxial Planar Type

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数据手册

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2SB933 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial Planar Type

2SB933

TO-252

Unit: mm

6.50^+0.15

Features

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Low collector-emitter saturation voltage VCE(sat).

Satisfactory linearity of forward current transfer ratio hFE.

Large collector current IC.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

-130

Collector-emitter voltage

Emitter-base voltage

Collector current

-80

-7

-5

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

-10

P^C

1.3

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-80

Typ

Max

Unit

Collector-emitter voltage

Collector-base cutoff curent

Emitter-base cutoff current

V^CEO

I^CBO

I^EBO

IC = -10mA, IB = 0

VCB = -100 V,IE = 0

VEB = -5 V, IC = 0

-10

-50

260

ìA

V^CE= -2 V, IC = -2 A

V^CE= -2 V, IC = -0.1 A

Forward current transfer ratio

h^FE

Base-emitter saturation voltage

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V^BE(sat)IC = -4 A, IB = -0.2 A

V^CE(sat)IC = -4 A, IB = -0.2 A

-1.5

-0.5

f^T

t^on

t^stg

t^f

VCE = -10 V, IC = -0.5 A , f = 10 MHz

MHz

ìs

0.13

0.5

I^C= -2 A,IB1 = -0.2 A,IB2 = 0.2 A,

V^CC= -50 V

Storage time

ìs

Fall time

0.13

ìs

hFE Classification

Rank

h^FE

90 180

130 260

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与2SB933相关器件

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2SB933TX	PANASONIC	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB934	PANASONIC	获取价格	Silicon PNP epitaxial planar type
2SB934	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type
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2SB934_15	KEXIN	获取价格	PNP Transistors
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