Datasheet > 2SB932-P

2SB932-P

更新时间： 2024-11-21 01:12:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1225K
描述
PNP Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB932-P 数据手册

SMD Type

Transistors

PNP Transistors

2SB932

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

■ Features

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● Low collector to emitter saturation voltage V^CE(sat)

● Satisfactory linearity of foward current transfer ratio hFE

● Large collector current I

0.127

max

+0.1

-0.1

● Complementary to 2SD1255

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

-130

-80

-7

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector current - Pulse

-4

-8

Collector Power Dissipation

Tc = 25°C

Ta = 25°C

℃

1.3

150

Junction Temperature

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-130

-80

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -10 mA， I

= -100μA， I

CB= -100V , I

EB= -5V , I =0

B=0

CBO

EBO

E=0

-10

-50

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-3 A, I

=-150mA

-0.5

-1.5

=-3 A, I

FE(1)

^CE= -2V, I

CE= -2V, I

= -100mA

= -1 A

DC current gain

hFE(2)

260

Turn-on time

Storage time

Fall time

0.15

0.8

= – 1A, IB1 = –100mA, IB2 = 100mA

stg

0.15

Transition frequency

^CE= -10V, I

C= -500mA,f=10MHz

MHz

■ Classification of hfe(2)

Type

2SB932-Q

90-180

2SB932-P

130-260

Range

www.kexin.com.cn

12 3

中文翻译

下载PDF

与2SB932-P相关器件

型号	品牌	获取价格	描述	数据表
2SB932Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-221VAR
2SB932-Q	KEXIN	获取价格	PNP Transistors
2SB932R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-221VAR
2SB932TX	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB933	TYSEMI	获取价格	Satisfactory linearity of forward current transfer ratio hFE. Large collector current IC.
2SB933	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power switching)
2SB933	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type
2SB933H	PANASONIC	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB933P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-262VAR
2SB933Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-262VAR