Datasheet > 2SB931-P

2SB931-P

更新时间： 2024-11-18 00:33:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1213K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB931-P 数据手册

SMD Type

Transistors

PNP Transistors

2SB931

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

2.30

-0.1

+0.8

-0.7

■ Features

+0.2

5.30

-0.2

0.50

● Low collector to emitter saturation voltage V^CE(sat)

● Satisfactory linearity of foward current transfer ratio hFE

● Large collector current I

0.127

max

+0.1

-0.1

● Complementary to 2SD1254

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-130

-80

-7

Collector Current - Continuous

Collector current - Pulse

-3

-6

Collector Power Dissipation

Tc = 25°C

Ta = 25°C

℃

1.3

150

Junction Temperature

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-130

-80

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -10 mA， I

= -100μA， I

CB= -100V , I

EB= -5V , I =0

B=0

CBO

EBO

E=0

-10

-50

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-2 A, I

=-100mA

-0.5

-1.5

=-2 A, I

FE(1)

^CE= -2V, I

CE= -2V, I

= -100mA

= -500mA

DC current gain

hFE(2)

260

Turn-on time

Storage time

Fall time

0.3

1.1

0.3

= – 0.5A,IB1 = –50mA, IB2 = 50mA

stg

Transition frequency

^CE= -10V, I

C= -500mA,f=10MHz

MHz

■ Classification of hfe(2)

Type

2SB931-Q

90-180

2SB931-P

130-260

Range

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2SB932	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type
2SB932	TYSEMI	获取价格	Low collector-emitter saturation voltage VCE(sat). Large collector current IC.
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