Datasheet > 2SB834O(TO-126)

2SB834O(TO-126)

更新时间： 2024-11-19 06:13:43

品牌	Logo	应用领域
友顺 - UTC		/
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4页	117K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SB834O(TO-126) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	3 A	配置：	Single
最小直流电流增益 (hFE)：	60	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	25 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SB834O(TO-126) 数据手册

UTC2SB834

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

DESCRIPTION

Low frequency power amplifier applications.

TO-126

1: EMITTER 2: COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS _{( Operating temperature range applies unless otherwise specified )}

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Total Power Dissipation (Tc=25°C)

Collector current

Junction Temperature

Storage Temperature

Base Current

SYMBOL

VCBO

VCEO

VEBO

TSTG

RATING

UNIT

°C

150

-55 ~ +150

0.5

ELECTRICAL CHARACTERISTICS_{(Ta=25°C,unless otherwise specified)}

PARAMETER

Collector-emitter breakdown voltage

Collector cut-off current

SYMBOL

BVCEO

ICBO

TEST CONDITIONS

Ic=50mA

MIN TYP MAX UNIT

µA

VCB=60V

VEB=7V

100

300

Emitter cut-off current

IEBO

Collector-emitter saturation voltage

Collector-emitter on voltage

DC current gain

VCE(SAT)

VCE(ON)

hFE1

IC=3A,IB=0.3A

VCE=5V,IC=0.5A

IC=0.5A,VCE=5V

IC=3A,VCE=5V

VCE=5V,IC=0.5A

0.7

hFE2

Current gain bandwidth product

MHZ

CLASSIFICATION of hFE1

RANK

150-300

RANGE

60-120

100-200

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R204-018,B

12 3 4

中文翻译

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