Datasheet > 2SB849

2SB849

更新时间： 2024-11-22 02:55:35

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	158K
描述
Silicon PNP Power Transistors

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数据手册

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2SB849 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB849

DESCRIPTION

·With TO-3PFa package

·Complement to type 2SD1110

·Wide area of safe operation

APPLICATIONS

·For use in low frequency power

amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-120

-7

UNIT

Open emitter

Open base

Open collector

-7

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3

中文翻译

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