Datasheet > 2SB849

2SB849

更新时间： 2024-11-18 07:30:19

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	135K
描述
Silicon PNP Power Transistors

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中文翻译

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2SB849 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB849

DESCRIPTION

·With TO-3PN package

·Complement to type 2SD1110

·Wide area of safe operation

APPLICATIONS

·For use in low frequency power

amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PN) and symbol

ABSOLUTE MAXIMUM RATINGS (T_C=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-120

-7

UNIT

Open emitter

Open base

Open collector

-7

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

ꢀ

150

T_j

-55~150

ꢀ

T_stg

12 3

中文翻译

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与2SB849相关器件

型号	品牌	获取价格	描述	数据表
2SB849_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB849_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB849A	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB849A	ISC	获取价格	Silicon PNP Power Transistors
2SB850	NJSEMI	获取价格	EPITAXIAL PLANER TYPE GENERAL PURPOSE POWER AMPLIFIER
2SB851	ROHM	获取价格	Epitaxial Planar PNP Silicon Translstors
2SB851/P	ROHM	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
2SB851/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
2SB851/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
2SB851/QR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon