生命周期: | Active | 零件包装代码: | SIP |
包装说明: | TO-126, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.06 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 9 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB834-Y-TA3-T | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2SB834-Y-TF3-T | UTC |
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Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2SB835 | PANASONIC |
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Small Signal Bipolar Transistor, 1A I(C), 18V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, | |
2SB835R | PANASONIC |
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Small Signal Bipolar Transistor, 1A I(C), 18V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, | |
2SB835S | PANASONIC |
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Small Signal Bipolar Transistor, 1A I(C), 18V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, | |
2SB849 | SAVANTIC |
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Silicon PNP Power Transistors | |
2SB849 | ISC |
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Silicon PNP Power Transistors | |
2SB849 | JMNIC |
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Silicon PNP Power Transistors | |
2SB849_15 | JMNIC |
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Silicon PNP Power Transistors | |
2SB849_2014 | JMNIC |
获取价格 |
Silicon PNP Power Transistors |