生命周期: | Active | 零件包装代码: | SIP |
包装说明: | TO-126, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.06 | Is Samacsys: | N |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 9 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB834-O-TA3-T | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2SB834-O-TF3-T | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2SB834-X-T60-K | UTC |
获取价格 |
HIGH VOLTAGE TRANSISTOR | |
2SB834-X-TA3-T | UTC |
获取价格 |
HIGH VOLTAGE TRANSISTOR | |
2SB834-X-TF3-T | UTC |
获取价格 |
HIGH VOLTAGE TRANSISTOR | |
2SB834Y | MOSPEC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB | |
2SB834-Y | SECOS |
获取价格 |
PNP Plastic-Encapsulated Transistor | |
2SB834Y(TO-126) | UTC |
获取价格 |
Transistor | |
2SB834-Y-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB834-Y-TA3-T | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti |