Datasheet > 2SB829_2014

2SB829_2014

更新时间： 2024-09-22 01:23:39

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	269K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB829_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB829

DESCRIPTION

·With TO-3PN package

·Complement to type 2SD1065

·Wide area of safe operation

·Low collector saturation voltage :

V_CE(sat)=–0.5V max.

APPLICATIONS

·Relay drivers,

·High-speed inverters,converters

·General high-current switching applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

-60

UNIT

Open base

-50

Open collector

-6

Collector current (DC)

Collector current (Pulse)

Collector power dissipation

Junction temperature

Storage temperature

-15

I_CP

-20

P_C

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3 4

中文翻译

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与2SB829_2014相关器件

型号	品牌	获取价格	描述	数据表
2SB829Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 15A I(C) \| TO-247VAR
2SB829-Q	ONSEMI	获取价格	Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB829R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 15A I(C) \| TO-247VAR
2SB829-R	ONSEMI	获取价格	Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB829S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 15A I(C) \| TO-247VAR
2SB831	HITACHI	获取价格	Silicon PNP Epitaxial
2SB831	RENESAS	获取价格	Silicon PNP Epitaxial
2SB831	KEXIN	获取价格	Silicon PNP Epitaxial
2SB831	TYSEMI	获取价格	Low frequency amplifier. Collector to base voltage VCBO -25 V
2SB831B	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 700MA I(C) \| SOT-143RVAR