Datasheet > 2SB831

2SB831

更新时间： 2024-11-17 06:22:07

品牌	Logo	应用领域
科信 - KEXIN		光电二极管
页数	文件大小	规格书
1页	36K
描述
Silicon PNP Epitaxial

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中文翻译

获取价格

数据手册

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2SB831 数据手册

SMD Type

TransistIoCrs

Silicon PNP Epitaxial

2SB831

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low frequency amplifier.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-25

-20

-5

-0.7

peak collector current

Collector power dissipation

Junction temperature

I^CP

P^C

150

Storage temperature

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBOIC = -10 ìA, IE = 0

V^(BR)CEO

Testconditons

Min

-25

-20

-5

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

IC = -1 mA, RBE =

V^(BR)EBOIE = -10 ìA, IC = 0

I^CBO

h^FE

VCB = -20 V, IE = 0

-1

240

-0.5

-1

DC current transfer ratio *

VCE = -1 V, IC = -0.15 A

Collector to emitter saturation voltage *

Base to emitter voltage *

V^CE(sat)IC = -0.5 A, IB = -0.05 A

V^BEVCE = -1 V, IC = -0.15 A

* Pulse test.

hFE Classification

Marking

hFE

85 170

120 240

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