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2SB766A PDF预览

2SB766A

更新时间: 2024-01-24 23:07:04
品牌 Logo 应用领域
威伦 - WILLAS 晶体晶体管
页数 文件大小 规格书
2页 351K
描述
SOT-89 Plastic-Encapsulate Transistors

2SB766A 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknown风险等级:5.68
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):170
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SB766A 数据手册

 浏览型号2SB766A的Datasheet PDF文件第2页 
WILLAS  
2SB766A  
SOT-89 Plastic-Encapsulate Transistors  
TRANSISTOR(PNP)  
FEATURES  
z
Large collector power dissipation PC  
z
Pb-Free package is available  
SOT-89  
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
1. BASE  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
-60  
Unit  
V
OLLECTOR  
EMITTER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
V
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
-1  
A
PC  
500  
m
TJ  
150  
Tstg  
-55~15
ELECTRICAL CHARACTERISTICS (Ta=us erwise specified)  
Parameter  
bo
st conditions  
Min  
-60  
-50  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltag
Collector-emitter breakdown
Emitter-base breakdown voltage  
Collector cut-off current  
BO =-10μA,IE=0  
R)CEIc=-2mA,IB=0  
V)EBO IE=-10μA,IC=0  
V
V
ICBO  
IEBO  
hFE(1)  
hFE(2)  
VCB=-20V,IE=0  
-0.1  
-0.1  
340  
μA  
μA  
Emitter cut-off current  
VEB=-4V,IC=0  
VCE=-10V,IC=-500mA  
VCE=-5V,IC=-1A  
85  
50  
DC current gain  
Collector-emitter saturation voltage  
VCE(sat)  
IC=-500mA,IB=-50mA  
-0.2  
-0.4  
-1.2  
V
Base-emitter saturation voltage  
Transition frequency  
VBE(sat)  
fT  
IC=-500mA,IB=-50mA  
-0.85  
200  
20  
V
VCE=-10V,IC=-50mA,f=200MHz  
VCB=-10V,IE=0,f=1MHz  
MHz  
pF  
Collector output capacitance  
Cob  
30  
CLASSIFICATION OF hFE(1)  
Rank  
Q
R
S
Range  
85-170  
120-240  
BR  
170-340  
MAKING  
BQ  
BS  
2012-10  
WILLAS ELECTRONIC CORP.  

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