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2SB766A-Q PDF预览

2SB766A-Q

更新时间: 2024-01-31 17:51:12
品牌 Logo 应用领域
WEITRON 晶体小信号双极晶体管局域网
页数 文件大小 规格书
3页 1056K
描述
Small Signal Bipolar Transistor

2SB766A-Q 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknown风险等级:5.68
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):170
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SB766A-Q 数据手册

 浏览型号2SB766A-Q的Datasheet PDF文件第2页浏览型号2SB766A-Q的Datasheet PDF文件第3页 
2SB766A  
PNP EPITAXIAL PLANAR TRANSISTOR  
P b  
Lead(Pb)-Free  
1. BASE  
2. COLLECTOR  
3. EMITTER  
1
2
3
SOT-89  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Units  
Value  
-60  
V
V
V
-50  
-5  
Collector Current -Continuous  
Collector Power dissipation  
Junction Temperature  
-1  
A
mW  
PC  
500  
150  
TJ  
Storage Temperature  
Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
-60  
-50  
-5  
-
TYP  
MAX  
UNIT  
V
V(BR)CBO  
-
-
-
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=-10μA, IE=0  
V(BR)CEO IC=-2mA, IB=0  
-
V
-
-
V(BR)EBO  
ICBO  
V
IE=-10μA, IC=0  
VCB=-20V, IE=0  
VEB=-4V, IC=0  
-
-0.1  
-0.1  
340  
-
μA  
μA  
-
-
-
Emitter cut-off current  
IEBO  
DC current gain  
hFE1  
VCE=-10V, IC=-500mA  
VCE=-5V, IC=-1A  
85  
50  
-
DC current gain  
hFE2  
-
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
IC=-500mA, IB=-50mA  
IC=-500mA, IB=-50mA  
VCE=-10V, IC=-50mA, f=200MHz  
VCB=-10V, IE=0, f=1MHz  
-0.2  
-0.4  
V
V
-
-0.85 -1.2  
-
-
200  
MHz  
pF  
20  
30  
Cob  
-
Collector output capacitance  
CLASSIFICATION OF hFE  
Rank  
Q
R
S
Range  
85-170  
120-240  
BR  
170-340  
Marking  
BQ  
BS  
WEITRON  
http://www.weitron.com.tw  
1/3  
26-Dec-08  

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