Datasheet > 2SB745AT

2SB745AT

更新时间： 2024-09-15 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	73K
描述
TRANSISTOR \| BJT \| PNP \| 55V V(BR)CEO \| 50MA I(C) \| SC-71

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中文翻译

获取价格

数据手册

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2SB745AT 数据手册

Transistor

2SB0745, 2SB0745A (2SB745, 2SB745A)

Silicon PNP epitaxial planer type

For low-frequency and low-noise amplification

Unit: mm

Complementary to 2SD0661 (2SD661) and 2SD0661A (2SD661A)

6.9 0.1

2.5 0.1

1.0

1.5

Features

Low noise voltage NV.

High foward current transfer ratio h_FE

1.5 R0.9

R0.9

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

0.55 0.1

0.45 0.05

Parameter

Symbol

Ratings

–35

Unit

Collector to

2SB0745

2SB0745A

2SB0745

V_CBO

base voltage

Collector to

–55

–35

V_CEO

2.5

emitter voltage 2SB0745A

Emitter to base voltage

Peak collector current

Collector current

–55

V_EBO

I_CP

I_C

–5

˚C

1:Base

–200

–50

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

–1

Unit

V_CB= –10V, I_E= 0

Collector cutoff current

I_CEO

V_CE= –10V, I_B= 0

µA

Collector to base

voltage

2SB0745

2SB0745A

–35

–55

–35

–55

–5

V_CBO

I_C= –10µA, I_E= 0

Collector to emitter 2SB0745

V_CEO

V_EBO

I_C= –2mA, I_B= 0

voltage

2SB0745A

Emitter to base voltage

I_E= –10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CB= –5V, I_E= 2mA

I_C= –100mA, I_B= –10mA

V_CE= –1V, I_C= –100mA

180

700

– 0.6

–1

Collector to emitter saturation voltage V_CE(sat)

Base to emitter voltage

Transition frequency

V_BE

f_T

– 0.7

150

V_CB= –5V, I_E= 2mA, f = 200MHz

V_CE= –10V, I_C= –1mA, G_V= 80dB

R_g= 100kΩ, Function = FLAT

MHz

Noise voltage

150

^*h_FERank classification

Rank

h_FE

Note.) The Part numbers in the Parenthesis show

conventional part number.

180 ~ 360

260 ~ 520

360 ~ 700

12 3 4

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与2SB745AT相关器件

型号	品牌	获取价格	描述	数据表
2SB745Q	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, M-A1,
2SB745R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, M-A1,
2SB745S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, M-A1,
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2SB747	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB750	ETC	获取价格	Si PNP Epitaxial Planar Darlington
2SB750A	ETC	获取价格	Si PNP Epitaxial Planar Darlington
2SB751	PANASONIC	获取价格	Si PNP EPITAXIAL PLANNAR DARLINGTON
2SB751A	PANASONIC	获取价格	Si PNP EPITAXIAL PLANNAR DARLINGTON