生命周期: | Obsolete | 包装说明: | TO-220, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PSFM-T2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 功耗环境最大值: | 20 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 40 MHz | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB537N | NEC |
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Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy | |
2SB539 | ISC |
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isc Silicon PNP Power Transistors | |
2SB539 | SAVANTIC |
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Silicon PNP Power Transistors | |
2SB539A | NEC |
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Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2SB539AQ | NEC |
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Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2SB539AR | NEC |
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Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2SB539B | NEC |
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Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2SB539BR | NEC |
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Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2SB539BS | NEC |
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Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2SB539C | NEC |
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Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 |