是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 3 A | 配置: | Single |
最小直流电流增益 (hFE): | 280 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1628ZZ-T2-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,16V V(BR)CEO,3A I(C),TO-243 | |
2SB1628ZZ-T2-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,16V V(BR)CEO,3A I(C),TO-243 | |
2SB1629 | PANASONIC |
获取价格 |
Silicon PNP epitaxial planar type(For power amplification) | |
2SB1630 | PANASONIC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1631 | PANASONIC |
获取价格 |
Silicon PNP epitaxial planar type(For power amplification) | |
2SB1631P | PANASONIC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1631Q | PANASONIC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1632 | PANASONIC |
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Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy | |
2SB1638 | PANASONIC |
获取价格 |
Silicon PNP epitaxial planar type(For low-voltage switching) | |
2SB1638A | PANASONIC |
获取价格 |
Silicon PNP epitaxial planar type(For low-voltage switching) |