SMD Type
Transistors
PNP Transistors
2SB1571
1.70 0.1
■ Features
● Low collector-emitter saturation voltage
● Complementary to 2SD2402
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-50
-30
-6
Unit
V
VCBO
VCEO
VEBO
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
-5
A
I
CP
-8
P
C
2
W
℃
T
J
150
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-50
-30
-6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 uA, I
Ic= -1 mA, I =0
= -100 uA, I
CB= -50V , I =0
EB= -6V , I =0
E=0
B
I
E
C=0
I
CBO
EBO
V
V
E
-0.1
-0.1
uA
V
I
C
I
I
I
C
=-3 A, I
=-5 A, I
=-3 A, I
B=-150 mA
B=-250 mA
B=-150 mA
-0.17 -0.35
-0.28 -0.55
-0.89 -1.2
-0.7
Collector-emitter saturation voltage
V
CE(sat)
C
C
Base - emitter saturation voltage
Base - emitter voltage
V
BE(sat)
V
BE
V
V
V
CE= -1V, I
CE= -1V, I
CE= -1V, I
C
C
C
= -100 mA
-0.6
80
= -1 A
DC current gain
hFE
= -2 A
100
200
265
350
50
400
Turn-on Time
t
on
I
R
C
= −2.0 A, VCC = −10 V,
= 5.0 Ω, IB1 = −IB2 = −0.1 A,
ns
Storage Time
t
stg
L
Fall Time
t
f
Collector output capacitance
Transition frequency
C
ob
T
V
CB= -10V, I
CE= -10V, I
E
= 0,f=1MHz
= 500 mA
100
150
pF
f
V
E
MHz
■ Classification of hfe(2)
Type
Range
Marking
2SB1571-X
100-200
HX
2SB1571-Y
160-320
HY
2SB1571-Z
200-400
HZ
1
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