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2SB1482T105/Q PDF预览

2SB1482T105/Q

更新时间: 2024-11-21 14:46:19
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管
页数 文件大小 规格书
3页 69K
描述
5A, 20V, PNP, Si, POWER TRANSISTOR

2SB1482T105/Q 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknown风险等级:5.77
最大集电极电流 (IC):5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SB1482T105/Q 数据手册

 浏览型号2SB1482T105/Q的Datasheet PDF文件第2页浏览型号2SB1482T105/Q的Datasheet PDF文件第3页 

与2SB1482T105/Q相关器件

型号 品牌 获取价格 描述 数据表
2SB1482T105/QR ROHM

获取价格

Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1482T105/R ROHM

获取价格

5A, 20V, PNP, Si, POWER TRANSISTOR
2SB1482T105P ROHM

获取价格

Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1482T105R ROHM

获取价格

Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1485M ETC

获取价格

TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | SC-71
2SB1485M/P ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SB1485M/PQ ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SB1485M/Q ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SB1485MC2/P ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SB1485MC2/Q ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon