生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.77 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1482T105/QR | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1482T105/R | ROHM |
获取价格 |
5A, 20V, PNP, Si, POWER TRANSISTOR | |
2SB1482T105P | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1482T105R | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1485M | ETC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | SC-71 | |
2SB1485M/P | ROHM |
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Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1485M/PQ | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1485M/Q | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1485MC2/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1485MC2/Q | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |