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2SB1488P PDF预览

2SB1488P

更新时间： 2024-11-05 23:20:07
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
3页 54K
描述
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 500MA I(C) | SC-71VAR

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中文翻译

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2SB1488P 数据手册

 浏览型号2SB1488P的Datasheet PDF文件第2页浏览型号2SB1488P的Datasheet PDF文件第3页 
Transistor  
2SB1488  
Silicon PNP triple diffusion planer type  
Unit: mm  
2.5±0.1  
For power switching  
1.05  
±0.05  
6.9±0.1  
4.0  
(1.45)  
0.8  
0.7  
Features  
High foward current transfer ratio hFE  
High-speed switching.  
High collector to base voltage VCBO  
Allowing supply with the radial taping.  
■
●
.
0.65 max.  
●
●
●
.
0.45+–00..015  
2.5±0.5 2.5±0.5  
1
2
3
Absolute Maximum Ratings (Ta=25˚C)  
■
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–400  
–400  
–7  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
Note: In addition to the  
lead type shown in  
1:Emitter  
2:Collector  
V
the upper figure, the 3:Base  
V
type as shown in  
the lower figure is  
also available.  
MT2 Type Package  
–1  
A
IC  
– 0.5  
1
A
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
W
˚C  
˚C  
Tj  
150  
1.2±0.1  
Tstg  
–55 ~ +150  
0.65  
max.  
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
+
0.1  
0.45–0.05  
(HW type)  
Electrical Characteristics (Ta=25˚C)  
■
Parameter  
Symbol  
ICBO  
Conditions  
VCB = –400V, IE = 0  
min  
typ  
max  
Unit  
µA  
µA  
µA  
V
–1  
–1  
–1  
Collector cutoff current  
ICEO  
IEBO  
VCEO  
VCE = –100V, IB = 0  
VBE = –5V, IC = 0  
Emitter cutoff current  
Collector to emitter voltage  
IC = –1mA, IB = 0  
–400  
80  
*1  
hFE1  
hFE2  
VCE = –5V, IC = –50mA  
280  
Forward current transfer ratio  
VCE = –5V, IC = –300mA*2  
IC = –100mA, IB = –10mA*2  
IC = –100mA, IB = –10mA*2  
VCB = –10V, IE = 0.1A, f = 1MHz*2  
IC = –100mA, RL = 1.5kΩ  
IB1 = –10mA, IB2 = 10mA  
VCC = –150V  
10  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
– 0.25  
– 0.8  
25  
– 0.5  
–1.2  
V
V
Transition frequency  
Turn-on time  
fT  
MHz  
µs  
ton  
tstg  
tf  
0.4  
1.0  
6.5  
1.0  
40  
Storage time  
5.5  
µs  
Collector current fall time  
Collector output capacitance  
0.5  
µs  
Cob  
VCB = –10V, IE = 0, f = 1MHz  
20  
pF  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
P
Q
80 ~ 160  
130 ~ 280  
1
123

中文翻译

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