2SB1490

更新时间： 2024-11-21 06:20:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	226K
描述
isc Silicon PNP Darlington Power Transistor

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中文翻译

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技术参数
数据手册

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2SB1490 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB1490 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1490

DESCRIPTION

·High DC Current Gain-

: h_FE= 5000(Min)@I_C= -6A

·Low-Collector Saturation Voltage-

: V_CE(sat)= -2.5V(Max.)@I_C= -6A

·Complement to Type 2SD2250

APPLICATIONS

·Designed for power amplifier applications

·Optimum for 80W HiFi output applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-160

-140

-5

UNIT

Collector Current-Continuous

Collector Current-Peak

-7

I_CM

-12

Collector Power Dissipation

@ T_C=25℃

P_C

Collector Power Dissipation

@ T_a=25℃

3.5

T_J

Junction Temperature

150

℃

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与2SB1490相关器件

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2SB1492	NJSEMI	获取价格	Silicon PNP Darlington Power Transistor
2SB1492P	PANASONIC	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1492Q	PANASONIC	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1493	PANASONIC	获取价格	For power amplification Complementary to 2SD2255
2SB1493P	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1493Q	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1494	RENESAS	获取价格	Silicon PNP Triple Diffused