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2SB1430-M-AZ PDF预览

2SB1430-M-AZ

更新时间: 2024-01-03 00:05:18
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网放大器晶体管
页数 文件大小 规格书
6页 115K
描述
5A, 100V, PNP, Si, POWER TRANSISTOR

2SB1430-M-AZ 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.21
外壳连接:ISOLATED最大集电极电流 (IC):5 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):2000JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SB1430-M-AZ 数据手册

 浏览型号2SB1430-M-AZ的Datasheet PDF文件第1页浏览型号2SB1430-M-AZ的Datasheet PDF文件第3页浏览型号2SB1430-M-AZ的Datasheet PDF文件第4页浏览型号2SB1430-M-AZ的Datasheet PDF文件第5页浏览型号2SB1430-M-AZ的Datasheet PDF文件第6页 
2SB1430  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 100 V, IE = 0  
MIN.  
TYP.  
MAX.  
1.0  
Unit  
µA  
VCE = 2.0 V, IC = 2.0 A  
VCE = 2.0 V, IC = 4.0 A  
IC = 2.0 A, IB = 2.0 mA  
IC = 2.0 A, IB = 2.0 mA  
VCE = 5.0 V, IC = 0.5 A  
VCB = 10 V, IE = 0, f = 1.0 MHz  
hFE1*  
hFE2*  
VCE(sat)*  
VBE(sat)*  
fT  
2,000  
500  
20,000  
DC current gain  
1.5  
2.0  
Collector saturation voltage  
Base saturation voltage  
Gain bandwidth product  
Collector capacitance  
Turn-on time  
V
V
80  
60  
MHz  
pF  
µs  
Cob  
IC = 2.0 A, IB1 = IB2 = 2.0 mA,  
RL = 25 , VCC 50 V  
Refer to the test circuit.  
ton  
0.5  
1.0  
1.0  
µs  
Storage time  
tstg  
µs  
Fall time  
tf  
* Pulse test PW 350 µs, duty cycle 2%  
hFE CLASSIFICATION  
Marking  
hFE1  
M
L
K
2,000 to 5,000  
4,000 to 10,000  
8,000 to 20,000  
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT  
Base current  
waveform  
Collector current  
waveform  
2
Data Sheet D13660EJ1V0DS  

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