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2SB1335AY2/DE PDF预览

2SB1335AY2/DE

更新时间: 2024-11-23 14:46:19
品牌 Logo 应用领域
罗姆 - ROHM 局域网放大器晶体管
页数 文件大小 规格书
3页 140K
描述
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN

2SB1335AY2/DE 技术参数

生命周期:Obsolete零件包装代码:TO-220FP
包装说明:TO-220FP, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
外壳连接:ISOLATED最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
功耗环境最大值:30 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):12 MHz
VCEsat-Max:1.5 VBase Number Matches:1

2SB1335AY2/DE 数据手册

 浏览型号2SB1335AY2/DE的Datasheet PDF文件第2页浏览型号2SB1335AY2/DE的Datasheet PDF文件第3页 

与2SB1335AY2/DE相关器件

型号 品牌 获取价格 描述 数据表
2SB1335AY2/E ROHM

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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1335AY2/F ROHM

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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1335C7/DE ROHM

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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1335C7/E ROHM

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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1335C7/EF ROHM

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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1335C7D ROHM

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4A, 60V, PNP, Si, POWER TRANSISTOR, TO-220FP, TO-220FP, 3 PIN
2SB1335C7E ROHM

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4A, 60V, PNP, Si, POWER TRANSISTOR, TO-220FP, TO-220FP, 3 PIN
2SB1335C7F ROHM

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4A, 60V, PNP, Si, POWER TRANSISTOR, TO-220FP, TO-220FP, 3 PIN
2SB1335D ROHM

获取价格

4A, 60V, PNP, Si, POWER TRANSISTOR, TO-220FP, TO-220FP, 3 PIN
2SB1335E ROHM

获取价格

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti