2SB1340

更新时间： 2024-11-19 05:56:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	100K
描述
isc Silicon PNP Darlington Power Transistor

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中文翻译

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技术参数
数据手册

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2SB1340 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SB1340 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1340

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -120V(Min)

·High DC Current Gain-

: h_FE= 2000(Min)@ (V_CE= -3V, I_C= -2A)

·Complement to Type 2SD1889

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-120

-6

UNIT

Collector Current-Continuous

Collector Current-Peak

-6

I_CM

-10

Collector Power Dissipation

@T_a=25℃

P_C

Collector Power Dissipation

@T_C=25℃

Junction Temperature

Storage Temperature

150

-55~150

℃

T_J

T_stg

isc Website：www.iscsemi.cn

中文翻译

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