Datasheet > 2SB1341

2SB1341

更新时间： 2024-11-23 07:30:03

品牌	Logo	应用领域
SAVANTIC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	105K
描述
Silicon PNP Power Transistors

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中文翻译

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2SB1341 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1341

DESCRIPTION

·With TO-220C package

·High DC current gain

·Low saturation voltage

·DARLINGTON

APPLICATIONS

·For low frequency power amplifier and

power driver applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-80

UNIT

Open emitter

Open base

-80

Open collector

-7

-4

I_CM

Collector current-peak

-6

T_a=25ꢀ

T_C=25ꢀ

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

ꢀ

T_stg

12 3

中文翻译

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与2SB1341相关器件

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2SB1341C7	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1341C7K	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1341K	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
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2SB1342C7K	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1342K	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
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